poly si

Study on a 1.5~ 2 μ m Double Doped Poly Si Gate CMOS Process

一种1.5～2μm双掺杂多晶硅栅CMOS工艺研究

Investigation of poly-Si TFT model

Poly-Si TFT理论模型的研究

Study on the Characteristics of As Doped Poly-Si

掺砷多晶硅特性研究

The waveguides ( poly Si/ SiO_2, Si/ SiO_2, Si_3N_4/ SiO_2) for on-chip optical interconnect have been analyzed in detail, including the basic conditions, fabrication method and loss mechanism. The recent progress is summarized.

较详细地分析了用于全硅片上光互连所用光波导（如多晶Si/SiO2、Si/SiO2、Si3N4/SiO2）需满足的基本条件、制作方法以及损耗机制，总结了目前的研究进展。

The performance of solar cells with the structure of single junction poly Si cell, a Si/ poly Si tandem cell and a Si/ poly Si/ poly Si triple cell are calculated.

利用该模型，分别模拟计算了单结多晶硅薄膜电池、aSi/Poly Si双结电池、aSi/Poly Si/Poly Si三结电池，并对结果进行了讨论。

MOSFET's are made by using p well and twin well process, and As and BF 2 implanted poly Si gate, respectively.

并分别用P阱和双阱工艺、多晶硅栅注砷和注BF2制作了电路样品。

Poly silicon film is a new functional material, which has both the advantages of cSi and a Si ∶ H films. It ′ s applied widely in energy science, micro electronics technology of information science.

多晶硅薄膜是集晶体硅材料和非晶硅氢合金薄膜优点于一体，在能源科学、信息科学的微电子技术中有广泛应用的一种新型功能材料。

Investigation of Poly Si/ SiO 2 Interface in Polysilicon Gate MOS Structure

硅栅MOS结构Poly-Si/SiO2界面研究

The application of the design method to the a-Si/ poly Si tandem solar cells is discussed.

文中讨论了该设计方法在a-Si/Poly Si叠层太阳电池方面的应用。

Approaches to enlarging poly-Si film grain size are discussed, with emphasis on existing optics-based and lithography-based artificial controlled super lateral growth ( AC-SLG) methods.

主要结合各种基于光束调制和光刻技术的人工控制超级横向生长方法，讨论了获得大晶粒尺寸优质多晶硅薄膜的途径。

The Theoretical Analyzation and Calculation About the Effects of Grain Size, Thickness and Back Surface Recombination Velocity on the Performances of Poly Si Thin Film MIS Schottky Solar Cells

晶粒度、厚度和背表面复合速度对MIS Schottky势垒多晶Si薄膜太阳电池性能影响的理论分析和计算

SIMS Analysis of Migration Characteristics of Fluorine in BF+ 2 Implanted Si and Poly Si Gate Under Rapid Thermal Annealing

BF2~+注入单晶硅和多晶硅栅快速热退火氟迁移特性的SIMS分析

The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N 2O/ NH 3 plasma. Radiation Characteristics of N_2O-Annealed H_2-O_2 Grown Oxide

采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。氮化H2-O2合成薄栅氧抗辐照特性